PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

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The present invention relates to a plasma processing device and a plasma processing method with improved uniformity and yield in processing a sample. The plasma processing device includes a sample base disposed in a processing chamber in a vacuum container, and electrodes disposed at a the center side portion in the sample base and the outer peripheral side portion thereof and receiving high-frequency power, and processes a wafer placed on the upper surface of the sample base by using plasma formed in the processing chamber. In the high-frequency power supplied to each of the center side electrode and the outer peripheral side electrode, amplitude repeats largeness and smallness at a predetermined cycle. A control device adjusts the length of the period of large amplitude of the high-frequency power or a ratio of the length of the period with respect to the cycle to be different.COPYRIGHT KIPO 2016