ELECTRODE FOR USE IN DISPLAY DEVICE OR INPUT DEVICE, AND SPUTTERING GATE FOR FORMING ELECTRODE

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PROBLEM TO BE SOLVED : To provide an electrode structure having excellent electrical resistivity, high reflectivity comparable to an Ag alloy film (single layer), and facilitating high accuracy microfabrication. SOLUTION : An electrode for use in a display device or an input device has a laminated film including a first layer composed of an Al alloy and formed on the substrate side, and a second layer formed thereon and composed of an Ag alloy. The electrode has a thickness of 100-800 nm, the second layer has a thickness of 60-480 nm, the thickness ratio of the second layer occupying the thickness of the electrode is 10-70%, and the thickness ratio of the first layer occupying the thickness of the electrode is 30% or more. The Al alloy contains, as an alloy element, a predetermined amount of at least one kind selected from a group consisting of : rare earth element; at least one kind selected from a group consisting of Si, Cu, and Ge; and at least one kind selected from a group consisting of Ti, Ta, W and Nb. COPYRIGHT : (C)2014, JPO&INPIT