METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

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PROBLEM TO BE SOLVED : To provide a method of manufacturing a semiconductor element in which adhesion of an electrode layer containing copper as a main component and an oxide semiconductor layer containing zinc is enhanced, while preventing generation of reduction in the oxide semiconductor layer. SOLUTION : In a method of manufacturing a semiconductor element by forming an adhesion layer 16 tightly adhered on the surface of an oxide semiconductor layer 14 containing zinc, and forming an electrode layer 17 containing copper as a main component tightly adhered on the surface of the adhesion layer 16, the adhesion layer 16 composed of a copper oxide is formed tightly adhered on the surface of the oxide semiconductor layer 14, by exposing the oxide semiconductor layer 14 to the surface of a processing object 10, and then sputtering a copper oxide target containing 3 atom% or more of oxygen in a rare gas atmosphere having a pressure lower than the atmospheric pressure. Since the adhesion layer 16 is formed by sputtering a copper oxide target containing 3 atom% or more of oxygen, the adhesion layer 16 does not reduce the oxide semiconductor layer 14, and adhesion is enhanced between the electrode layer 17 and the oxide semiconductor layer 14. COPYRIGHT : (C)2014, JPO&INPIT