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SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

2025-06-18 06:344370下载
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A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises : a semiconductor substrate (100); a source region and a drain region defined in the semiconductor substrate (100) respectively, and a trench (200, 300) formed in the source region and/or the drain region, in which a rare earth oxide layer (400) is formed in the trench (200, 300); a source (500) and/or a drain (600) formed on the rare earth oxide layer (400); and a channel region (700) formed between the source (500) and the drain (600). A relationship between a lattice constant a of the rare earth oxide layer (400) and a lattice constant b of a semiconductor material of the source (500) and/or the drain (600) and/or the channel region (700) is a = (n ?c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
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