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The present invention relates to a semiconductor device with a clear electrode and a manufacturing method thereof. The semiconductor with the clear electrode comprises a lower nitride layer, a metal layer formed on the nitride layer, and an upper nitride layer formed on the metal layer. As the metal layer is formed between the nitride layers, the clear electrode is manufactured with excellent property without rare-earth elements. [Reference numerals] (110) Lower nitride layer; (120) Metal layer; (130) Upper nitride layer