MANGANESE OXIDE THIN FILM LAMINATE AND OXIDE LAMINATE

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Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate (1) and provided with a first manganese oxide thin film (20) and a second manganese oxide thin film (21) which are in contact with each other. In the material of the first manganese oxide thin film, the cubic root of the unit cell volume in the bulk is greater than the lattice constants of the substrate, but is smaller in the material of the second manganese oxide thin film. The materials of the first and second manganese oxide thin films have the compositional formulae RMnO3 and LMnO3 (wherein R and L are each at least one mutually different trivalent rare earth element selected from lanthanoids). In both manganese oxide thin films, an atomic layer containing R (L) and not containing Mn, and an atomic layer containing Mn and not containing R are laminated alternately in the vertical direction of the substrate surface, and there are two non-equivalent crystal axes in the in-plane direction of the substrate surface.