SEMICONDUCTOR PORCELAIN COMPOSITION, POSITIVE TEMPERATURE COEFFICIENT ELEMENT, AND HEAT-GENERATING

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Provided is a semiconductor porcelain composition that is characterized by having a composition represented by [(Bi∙A)x(Ba1-yRy)1-x](Ti1-zMz)aO3 (where A is at least one of Na, Li and K; R is at least one type of rare earth element (including Y); and M is at least one of Nb, Ta and Sb); and is further characterized in that the aforementioned a, x, y and z satisfy, 0.90 ≤a ≤ 1.10, 0 < x ≤0.30, 0 ≤y ≤0.050 and 0 ≤z ≤0.010, and the average distance between voids, which represents the average value of the space between voids that exist internally, is 1.0 μm to 8.0 μm.