MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE

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A low-temperature protective layer having AlN is grown on a rare earth perovskite substrate and a first GaN based semiconductor layer having Alx1Ga1-x1N where composition x1 of Al is 0.40≦x1≦0.45 is grown thereon. Then, a second GaN semiconductor layer having Alx2Ga1-x2N where composition x2 of Al is 0≦x2≦0.45 is grown on the first GaN based semiconductor layer.