SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

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PROBLEM TO BE SOLVED : To provide a transistor using an oxide layer containing Zn, while not containing rare metals, such as In and Ga, and to stabilize electrical properties by reducing an off-state current in the transistor that uses the oxide layer containing the Zn. SOLUTION : In the transistor using the oxide layer containing Zn, an oxide semiconductor layer containing an insulating oxide is laminated on the oxide layer, and the transistor is so formed that the oxide layer and a source electrode layer or a drain electrode layer are brought into contact with each other via the oxide semiconductor layer containing the insulating oxide, and thereby; and variations in threshold voltage of the transistor is reduced, and the electrical properties are stabilized. COPYRIGHT : (C)2011, JPO&INPIT