ALUMINUM NITRIDE SUBSTRATE, METHOD FOR PRODUCING THE SAME, AND CIRCUIT BOARD AND SEMICONDUCTOR DEV

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PROBLEM TO BE SOLVED : To provide an aluminum nitride substrate having excellent heat radiation characteristics and a high strength, a method for producing the aluminum nitride substrate, and a circuit board and a semiconductor device. SOLUTION : The aluminum nitride substrate comprises a polycrystalline substance which includes a plurality of aluminum nitride crystal grains and composite oxide crystal grains including a rare-earth element and aluminum and existing at the grain boundary of the aluminum nitride crystal grains. The main component of the aluminum nitride substrate is aluminum nitride. The aluminum nitride crystal grains have an average grain diameter of 5 μm or smaller. The composite oxide crystal grains have an average grain diameter of 5 μm or smaller, a thermal conductivity of 200 W/m*K or higher and a three-point bending strength of 500 MPa or higher. COPYRIGHT : (C)2010, JPO&INPIT