Insulation film manufacturing method, reaction device, power generation device and electronic appa

文件类型：PDF文档
文件大小：2257K
Disclosed is a reaction device that includes a metal substrate and an R2O3 film. The R2O3 film has a crystal structure structured with at least one rare earth element R selected from the group including Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu. The R2O3 film is formed on at least a portion of a surface of the metal substrate where an insulation property is needed.