RESISTIVE MEMORY DEVICE

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Disclosed is a resistive memory device which has a relative high switching voltage and can achieve a relatively high resistance change ratio. The resistive memory device comprises an element (2) and counter electrodes (3, 4) which are opposed to each other through at least a part of the element (2), wherein the element (2) preferably comprises a strontium titanate semiconductor ceramic which is represented by the general formula : (Sr1-xAx)v(Ti1-yBy)wO3 (wherein A represents at least one element selected from Y and a rare earth element, and B represents at least one of Nb and Ta) and satisfies the requirements shown by the following formulae : 0.001 ≤ x+y ≤ 0.02 (wherein 0 ≤ x ≤ 0.02, and 0 ≤ y ≤ 0.02); and 0.87 ≤ v/w ≤ 1.030. The semiconductor ceramic has such a characteristic property that the switching voltage can be varied depending on the number of grain boundaries present in an area sandwiched by the counter electrodes (3, 4) and the like.