INTERLAYER OF ORIENTATIONAL SUBSTRATE FOR FORMING EPITAXIAL FILM AND ORIENTATIONAL SUBSTRATE FOR FOR

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PROBLEM TO BE SOLVED : To provide the interlayer of an orientational substrate for forming an epitaxial film that enables formation of an epitaxial film having high orientation. SOLUTION : In the interlayer of an orientational substrate for forming the epitaxial film, which is provided between a base material and an epitaxial film to be formed on at least one surface of the base material, the interlayer has a single layer structure or a multilayer structure of not less than two layers and the layer in contact with the substrate is formed from an indium tin oxide (ITO). This interlayer can have a multilayer structure, and can be provided on the ITO layer with at least one layer formed from nickel, nickel oxide, zirconium oxide, a rare earth oxide, magnesium oxide, strontium titanate (STO), strontium-barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum. COPYRIGHT : (C)2009, JPO&INPIT