Single crystal heat treatment method

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The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere [in-line-formulae]Y2−(x+y)LnxCeySiO5  (1)[/in-line-formulae](wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) [in-line-formulae]Gd2−(z+w)LnzCewSiO5  (2)[/in-line-formulae](wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) [in-line-formulae]Gd2-(p+q)LnpCeqSiO5  (3)[/in-line-formulae](wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) [in-line-formulae]Gd2−(r+s)LurCesSiO5  (4)[/in-line-formulae](wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).