TFT and OLED comprising the same TFT and method of crystallizing semiconductor applied to the same T

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A thin film transistor is provided to improve heat efficiency with respect to crystallization by preventing the incident heat by a laser beam from being transferred from an amorphous silicon layer to an underlying substrate while using a heat blocking layer. A heat blocking layer(30) is formed on a substrate(10), made of YSZ(yttria-stabilized zirconia), a YSZ compound or a rare-earth zirconates. A polycrystalline semiconductor active layer is formed on the heat blocking layer, including a source, a drain and a channel region. A buffer layer(20) is formed between the substrate and the heat blocking layer.