ALUMINUM NITRIDE-BASED SINTERED COMPACT AND SEMICONDUCTOR HOLDING DEVICE

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An aluminum nitride-based sintered compact 1 includes : crystalline particles 2 of Mg-containing aluminum nitride; a composite oxide which has a Garnet type crystal structure and contains a rare earth element and Al; and a composite oxynitride that contains Mg and Al. Particles 3 of the composite oxide and particles 4 of the composite oxynitride are scattered between the crystalline particles 2 of the Mg-containing aluminum nitride. The composite oxide may contain Y. The crystalline particles 2 of the Mg-containing aluminum nitride may contain 0.1-1.0 mol% of Mg if the content of all contained metal elements is taken to be 100 mol%. A semiconductor holding device is provided with this aluminum nitride-based sintered compact 1 and an electrode 13 for electrostatic adsorption.