High-frequency transmitting body and its manufacturing method

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PROBLEM TO BE SOLVED : To obtain the subject transmitter consisting of an aluminum nitride sintered compact predominant in aluminum nitride crystal phase, specified in silicon content and dielectric loss, thereby improved in high-frequency transmission and prevented from breakage due to heat shock caused by high-frequency energy absorption. SOLUTION : This high-frequency transmitter is such one as to be <=200 ppm in silicon content and <=1×10-2 in dielectric loss (tanδ). The transmitter is obtained, for example, by pressure burning of aluminum nitride powder at 1, 600-2, 000 deg.C in a nonoxidative atmosphere to form an aluminum nitride sintered compact, wherein the silicon content of the aluminum nitride powder is brought to <=300 ppm and the silicon content of the final transmitter to <=200 ppm by volatilizing an excess of the silicon during burning process. If this transmitter contains a rare earth metal oxide phase, its content is pref. <=10 wt.%, on an outer basis, based on the aluminum nitride crystal phase.