METHOD AND APPARATUS FOR DEPOSITING SILICON OXYNITRIDE FILM

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PROBLEM TO BE SOLVED : To deposit an SiON film added with a rare earth element. SOLUTION : The inside of a deposition chamber 102 and an ECR ion source 101 is evacuated to a vacuum and the plasma by gaseous argon, gaseous oxygen and gaseous nitrogen is generated by an electron cyclotron resonance method in an ECR ion source 101. The generated plasma ion is extracted from an ion extraction port 102a and the extracted plasma is irradiated to the surface of the substrate 105 to which gaseous silane is supplied from a source gas introducing section 107. Silicon oxynitride is deposited on the substrate 105 and a high-frequency voltage is applied to a rare earth metal target 111 to induce a sputtering phenomenon and the rare earth elements constituting the rare earth metal target 111 is jumped out and is made to arrive at the substrate 105. COPYRIGHT : (C)2006, JPO&NCIPI