THIN FILM LAMINATE, ACTUATOR ELEMENT USING THE SAME, FILTER ELEMENT, FERROELECTRIC MEMORY AND OPT

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PROBLEM TO BE SOLVED : To provide a thin film laminate where a thin film having superior crystallinity, sufficient piezoelectricity, electrostriction property, ferroelectricity or electro-optical effect can epitaxially be grown, and to provide an actuator element using the thin film laminate, a filter element, a ferroelectric memory and an optical deflection element. SOLUTION : The thin film laminate 10 has a single crystal substrate 11, and a zirconium oxide film 12, a C-rare earth structure film 13 and a simple perovskite structure film 14, which are sequentially laminated on the single crystal substrate 11 with epitaxial growth. The C-rare earth structure film 13 of rare earth oxide having a crystal structure of a C-rare earth structure (cubic join) is formed on the zirconium oxide film 12. Thus, the simple perovskite structure film 14 consisting of metal oxide of the crystal structure having a simple perovskite lattice can be formed in plane orientation (001). The simple perovskite structure film 14 is rotated with respect to the C-rare earth structure film 13 by 45° with a crystal growth direction as a rotation axis so as to grow it. COPYRIGHT : (C)2006, JPO&NCIPI