SILICON NITRIDE SINTERED COMPACT, METHOD FOR MANUFACTURING THE SAME AND CIRCUIT BOARD USING THE SAM

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PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact combinedly having a thermal conductivity of ≥100 W/(m×K) and a bending strength of ≥600 MPa, to provide a method for manufacturing the same, and to provide a circuit board. SOLUTION : In the silicon nitride sintered compact, Mg, Lu and at least one kind of element selected from rare earth elements (RE) including Y are added as sintering assistants, the sintered compact comprises Mg by 0.03 to 8.0 mol% expressed in terms of magnesium oxide (MgO), Lu by 0.14 to 1.30 mol% expressed in terms of lutetium oxide (Lu2O3) and at least one kind of element selected from rare earth elements (RE) by 0.12 to 1.30 mol% expressed in terms of oxide (RExOy), and the balance βsilicon nitride. The sintered compact is composed of silicon nitride particles and a boundary phase. The total oxygen content in the sintered compact is ≤2.5 mass%, and at least Lu4Si2O7N2 crystals are precipitated into the boundary phase.