SPUTTERING METHOD

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PROBLEM TO BE SOLVED : To provide a sputtering method capable of ensuring film thickness uniformity in an extensive range without considerably degrading the target utilization efficiency by using a compact target of the diameter of ≤ 2 inches. SOLUTION : In the sputtering method, a target of the diameter of ≤ 2 inches is arranged facing an electrode in a vacuum container, plasma is generated in the vacuum container by applying the high frequency power to the electrode while introducing at least one of rare gas and reactive gas in the vacuum container, and a substrate arranged on the electrode is treated. The molecular weight of at least one of rare gas and reactive gas is larger than that of the element of the largest atomic weight out of the elements to constitute the target.