COMPLEX OXIDES FOR USE IN SEMICONDUCTOR DEVICES AND RELATED METHODS

文件类型：PDF文档
文件大小：2160K
A semiconductor device includes a semiconductor substrate, a first oxide layer on the semiconductor substrate including an element from the semiconductor substrate, and a second oxide layer on the first oxide layer opposite the semiconductor substrate. The second oxide layer includes a stoichiometric, single-phase complex oxide represented by the formula : AhBjOk, or equivalently (AmOn)a(BqOr)b in which the elemental oxide components, (AmOn) and (BqOr) are combined so that h = j or, equivalently, ma = bq, and a, b, h, j, k, m, n, q and r are non-zero integers; and wherein : A is an element of the lanthanide rare earth elements of the periodic table or the trivalent elements from cerium to lutetium; and B is an element of the transition metal elements of groups IIIB, IVB or VB of the periodic table.