METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To provide a technology for improving operation life of a quarts component forming a plasma etching apparatus. SOLUTION : Fig. 5 is a graph showing a degree of consumption by the etching gas of a shield ring for insulating the circumference of an upper electrode of the plasma etching apparatus. The horizontal axis of Fig. 5 indicates a distance a from the internal circumference of the concentrically formed shield ring, while the vertical axis shows a thickness b of the shield ring. A solid line (1) indicates an example where only quartz is used as a material of the shield ring, while a solid line (2) indicates an example where aluminum and rare-earth metal are added to quartz as materials of the shield ring. The solid line (1) and the solid line (2) show states after an elapse of the operation period of 300 hours. A broken line (3) shows the shield ring before use. COPYRIGHT : (C)2008, JPO&INPIT