FERROMAGNETIC/FERROELECTRIC MATERIAL, AND SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To provide a ferromagnetic/ferroelectric material capable of manufacturing relatively easily at low cost without requiring special environment such as very high pressure, which possesses ferromagnetism and ferroelectricity at the same time, and having a very stable perovskite structure. SOLUTION : The ferromagnetic/ferroelectric material has a crystalline lattice of a composition formula ABO3, containing Bi ions and at least one sort of rare earth positive ions at the site of A and two or more sorts of magnetic ions which are positive ions and indicate superexchange interaction at the site of B, respectively. An MFIS-FET is constituted by applying the material which has ferromagnetic and ferroelectric at the same time for a capacitor film 3. COPYRIGHT : (C)2007, JPO&INPIT