N-TYPE SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD OF FABRICATING THE SAME

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PROBLEM TO BE SOLVED : To provide an n-type schottky barrier tunnel transistor and a method of fabricating the same. SOLUTION : The n-type Schottky barrier tunnel transistor comprises a silicon layer in which a channel region is formed; a gate formed in a superimposed configuration on the channel region in a upper region of the silicon layer, while being attached with a gate dielectric layer on an interface with the silicon layer; and double layers each having a rare-earth metal silicide layer and a transition metal silicide layer, and the double layers are formed in the upper region of the silicon layer as a source and a drain interposing the channel region therebetween. COPYRIGHT : (C)2006, JPO&NCIPI